Tag: phase change memory
IBM scientists have broken new ground in the development of a phase change memory technology (PCM) that puts a target on competing 3D XPoint technology from Intel and Micron. IBM successfully stored 3 bits per cell in a 64k-cell array that had been pre-cycled 1 million times and exposed to temperatures up to 75∘C. A paper describing the advance was presented this week at the IEEE International Memory Workshop in Paris. Phase-change memory is an up-and-coming non-volatile memory technology…
<img src=”http://media2.hpcwire.com/hpcwire/world_connectivity_200x.jpg” alt=”” width=”95″ height=”70″ />The top research stories of the week include lessons learned from system failures; a cross-platform OpenCL implementation; the best memory to extract GPU’s potential; innovative ideas for next-generation interconnects; and the benefits of cloud storage to HPC applications.
Researchers look to boost speed of phase change memory.
With all the focus on more powerful microprocessors, sometimes it’s easy to forget that speedier chips do no good if memory is your bottleneck. In the final ISC’11 keynote of the week, Micron Technology VP Dean Klein talked about technologies that can help to alleviate this problem. HPCwire asked Klein to preview the topic and give us his take on where he thinks memory technologies are heading, especially in regard to high performance computing.
Researchers at the University of California, San Diego have built a solid state storage system that they claim outperforms state-of-the-art flash memory products. The new system, know as Moneta, uses phase change memory, a technology that some predict will replace the NAND flash memory used in nearly every solid state drive today.
What comes after NAND flash memory?
Intel and Numonyx hit stackable milestone.