BOISE, Idaho, June 23 – Micron Technology, Inc., one of the world’s leading providers of advanced semiconductor solutions, today announced an ongoing collaboration with Intel to deliver an on-package memory solution for Intel’s next-generation Xeon Phi processor, codenamed Knights Landing. The memory solution is the result of a long-term effort between the two companies to break down the memory wall, leveraging the fundamental DRAM and stacking technologies also found in Micron’s Hybrid Memory Cube products.
“The ecosystem is changing and the importance of scalable on-package memory and memory bandwidth is now coming to light,” said Chirag Dekate, Research Manager at IDC. “Memory is at the heart of the solution space which will benefit both big compute and big data. This announcement is a clear validation of how Micron is advancing the role and impact of memory on systems and the value that 3D memory can deliver.”
Delivering 5X the sustained memory bandwidth versus DDR4 with one-third the energy per bit in half the footprint, the Knights Landing high performance, on package memory combines high-speed logic and DRAM layers into one optimized package that will set a new industry benchmark for performance and energy efficiency. The memory stack provides optimal levels of reliability, availability, and serviceability, which are critical elements for high-performance computing systems. One of the first applications of the Knights Landing system—a next-generation Cray XC supercomputer—was announced by NERSC on April 29.
“Intel’s many integrated cores (MIC) architecture and Micron’s high performance memory is a formidable combination,” said Tom Eby, vice president for Micron’s compute and networking business unit. “Intel’s and Micron’s advanced technologies successfully marry the processor to a memory system that delivers the very rare coupling of low power and extreme bandwidth.”
“The next-generation Intel Xeon Phi processor, codenamed Knights Landing, will launch with up to 16GB of high performance, on-package memory that delivers dramatically improved sustained memory bandwidth versus DDR4 and brings tremendous power-efficiency and space-savings. It is the first Intel HPC processor to use this new high performance on package memory,” said Charles Wuischpard, Vice President, General Manager, Workstations and High Performance Computing Data Center Group at Intel. “This will allow the world’s leading researchers, scientists, and engineers to run larger workloads faster while maintaining current code investments. We’re pleased to be working with Micron to deliver it.”
For more information on Micron’s managed high performance memory solutions, visit http://www.micron.com/products/hybrid-memory-cube.
Micron Technology, Inc., is one of the world’s leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets a full range of DRAM, NAND and NOR Flash memory, as well as other innovative memory technologies, packaging solutions, and semiconductor systems, for use in leading-edge computing, consumer, networking, embedded and mobile products. Micron’s common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology, Inc. visit www.micron.com.
Source: Micron Technology