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Micron Quits 3D XPoint, Puts Factory Up for Sale
March 16, 2021
After almost 10 years of investments and flagging progress, Micron announced today (Tuesday) that it is ending its involvement in 3D XPoint, the non-volatile me Read more…
Intel Touts Optane Performance, Teases Next-gen “Crow Pass”
January 5, 2021
Competition to leverage new memory and storage hardware with new or improved software to create better storage/memory schemes has steadily gathered steam during Read more…
With Optane Gaining, Intel Exits NAND Flash
October 21, 2020
In a sign that its 3D XPoint memory technology is gaining traction, Intel Corp. is departing the NAND flash memory and storage market with the sale of its manuf Read more…
Japan’s AIST Benchmarks Intel Optane; Cites Benefit for HPC and AI
February 19, 2020
Last April Intel released its Optane Data Center Persistent Memory Module (DCPMM) – byte addressable nonvolatile memory – to increase main memory capacity a Read more…
Micron Delivers 3D XPoint Drive, Acquires FPGA Device Maker
October 25, 2019
Micron Technology unveiled the X100, a new solid-state drive based on 3D XPoint technology that the company claims is the fastest in the world. It introduced tw Read more…
Intel Ships Drives Based on 3D XPoint Non-volatile Memory
March 20, 2017
Intel Corp. has begun shipping new storage drives based on its 3D XPoint non-volatile memory technology as it targets data-driven workloads. Intel’s new Optane solid-state drives, designated P4800X, seek to combine the attributes of memory and storage in the same device. Read more…
Micron, Intel Prepare to Launch 3D XPoint Memory
August 16, 2016
Micron Technology used last week’s Flash Memory Summit to roll out its new line of 3D XPoint memory technology jointly developed with Intel while demonstrating the technology in solid-state drives. Micron claimed its Quantx line delivers PCI Express (PCIe) SSD performance with read latencies at less than 10 microseconds and writes at less than 20 microseconds. Read more…
IBM Puts 3D XPoint on Notice with 3 Bits/Cell PCM Breakthrough
May 18, 2016
IBM scientists have broken new ground in the development of a phase change memory technology (PCM) that puts a target on competing 3D XPoint technology from Intel and Micron. IBM successfully stored 3 bits per cell in a 64k-cell array that had been pre-cycled 1 million times and exposed to temperatures up to 75∘C. A paper describing the advance was presented this week at the IEEE International Memory Workshop in Paris. Phase-change memory is an up-and-coming non-volatile memory technology... Read more…
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