IBM scientists have broken new ground in the development of a phase change memory technology (PCM) that puts a target on competing 3D XPoint technology from Intel and Micron. IBM successfully stored 3 bits per cell in a 64k-cell array that had been pre-cycled 1 million times and exposed to temperatures up to 75∘C. A paper describing the advance was presented this week at the IEEE International Memory Workshop in Paris. Phase-change memory is an up-and-coming non-volatile memory technology…
With Moore’s law in peril, the search is on for the next computing substrate. Keeping up the pace of progress in an ever more compute and data driven world will likely require a post-silicon invention that can satisfy humanity’s need for faster, smaller, greener and more powerful computers. In recognition of the size and speed Read more…
<img src=”http://media2.hpcwire.com/hpcwire/world_connectivity_200x.jpg” alt=”” width=”95″ height=”70″ />The top research stories of the week include lessons learned from system failures; a cross-platform OpenCL implementation; the best memory to extract GPU’s potential; innovative ideas for next-generation interconnects; and the benefits of cloud storage to HPC applications.
Researchers look to boost speed of phase change memory.
Researchers at the University of California, San Diego have built a solid state storage system that they claim outperforms state-of-the-art flash memory products. The new system, know as Moneta, uses phase change memory, a technology that some predict will replace the NAND flash memory used in nearly every solid state drive today.
What comes after NAND flash memory?
Intel and Numonyx hit stackable milestone.